Project Info
Development of High-Precision ICP-RIE Process for GaN Nanopatterning and Metasurface Fabrication
Project Goals and Description:
This project aims to develop a finely tuned inductively coupled plasma reactive ion etching (ICP-RIE) process for the fabrication of nanoscale patterns and metasurfaces on gallium nitride (GaN) materials. GaN's exceptional electrical, optical, and mechanical properties make it a prime candidate for advanced photonics, quantum devices, and optoelectronic metasurfaces. However, its chemical inertness and physical robustness pose significant challenges for achieving high-aspect-ratio, low-damage nanopatterning. Objectives:
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Optimize ICP-RIE parameters (e.g., gas chemistry, RF bias power, ICP power, pressure, and temperature) to achieve anisotropic, smooth-sidewall etching of GaN.
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Minimize surface roughness and plasma-induced damage to maintain GaN's optical quality post-etching.
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Demonstrate reproducible fabrication of nanopatterns and metasurfaces with feature sizes down to sub-100 nm.
Technical Approach:
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Mask Preparation: The student will be working with existing masks developed using electron beam lithography (EBL) or nano-imprinted patterns on GaN. A robust etch mask (e.g., Ni, SiO₂, or hard mask layers) will be deposited to improve etch selectivity and mask durability.
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Etch Chemistry: Chlorine-based gases (Cl₂, BCl₃, Ar) will be explored for their effectiveness in chemically assisted physical etching of GaN. Oxygen will be introduced in small amounts when needed to suppress polymer formation.
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Characterization:
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SEM and AFM for feature inspection and sidewall roughness measurement.
- Optical measurements (e.g., reflectometry) for assessing metasurface functionality.
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Expected Outcomes:
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A reproducible ICP-RIE recipe for GaN etching with vertical profiles, low roughness (< 5 nm RMS), and high selectivity (> 5:1 mask-to-GaN).
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Successful fabrication of functional GaN metasurfaces demonstrating beam shaping, color filtering, or polarization control.
Impact:
This project will enable scalable manufacturing of GaN-based metasurfaces for high-performance optical applications, including advanced photonic circuits, quantum light sources, and next-generation displays.
More Information:
Primary Contacts:
Student Preparation
Qualifications
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Major: Physics, Materials Science, Electrical Engineering, Mechanical Engineering, Nanotechnology, or related fields.
- GPA: Recommended minimum GPA of 3.2/4.0 (or equivalent) .
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Lab Experience:
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Basic familiarity with laboratory practices (glove handling, contamination control).
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Some experience with fabrication processes (e.g., photolithography, spin-coating, thin film deposition) through coursework, labs, or prior internships.
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Technical Skills:
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Basic understanding of plasma physics and etching mechanisms (could be from an introductory course).
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Comfort with using microscopes for characterization.
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Basic skills in data analysis (Excel, Python, or MATLAB).
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