Project Info

Development of High-Precision ICP-RIE Process for GaN Nanopatterning and Metasurface Fabrication

Patrice Genevet
patrice.genevet@mines.edu

Project Goals and Description:

This project aims to develop a finely tuned inductively coupled plasma reactive ion etching (ICP-RIE) process for the fabrication of nanoscale patterns and metasurfaces on gallium nitride (GaN) materials. GaN's exceptional electrical, optical, and mechanical properties make it a prime candidate for advanced photonics, quantum devices, and optoelectronic metasurfaces. However, its chemical inertness and physical robustness pose significant challenges for achieving high-aspect-ratio, low-damage nanopatterning. Objectives:

  • Optimize ICP-RIE parameters (e.g., gas chemistry, RF bias power, ICP power, pressure, and temperature) to achieve anisotropic, smooth-sidewall etching of GaN.

  • Minimize surface roughness and plasma-induced damage to maintain GaN's optical quality post-etching.

  • Demonstrate reproducible fabrication of nanopatterns and metasurfaces with feature sizes down to sub-100 nm.

Technical Approach:

  • Mask Preparation: The student will be working with existing masks developed using electron beam lithography (EBL) or nano-imprinted patterns on GaN. A robust etch mask (e.g., Ni, SiO₂, or hard mask layers) will be deposited to improve etch selectivity and mask durability.

  • Etch Chemistry: Chlorine-based gases (Cl₂, BCl₃, Ar) will be explored for their effectiveness in chemically assisted physical etching of GaN. Oxygen will be introduced in small amounts when needed to suppress polymer formation.

  • Characterization:

    • SEM and AFM for feature inspection and sidewall roughness measurement.

    • Optical measurements (e.g., reflectometry) for assessing metasurface functionality.

Expected Outcomes:

  • A reproducible ICP-RIE recipe for GaN etching with vertical profiles, low roughness (< 5 nm RMS), and high selectivity (> 5:1 mask-to-GaN).

  • Successful fabrication of functional GaN metasurfaces demonstrating beam shaping, color filtering, or polarization control.

Impact:
This project will enable scalable manufacturing of GaN-based metasurfaces for high-performance optical applications, including advanced photonic circuits, quantum light sources, and next-generation displays.

More Information:

Grand Challenge: Engineer the tools of scientific discovery.

Primary Contacts:

Patrice Genevet

Student Preparation

Qualifications

  • Major: Physics, Materials Science, Electrical Engineering, Mechanical Engineering, Nanotechnology, or related fields.

  • GPA: Recommended minimum GPA of 3.2/4.0 (or equivalent) .
  • Lab Experience:

    • Basic familiarity with laboratory practices (glove handling, contamination control).

    • Some experience with fabrication processes (e.g., photolithography, spin-coating, thin film deposition) through coursework, labs, or prior internships.

  • Technical Skills:

    • Basic understanding of plasma physics and etching mechanisms (could be from an introductory course).

    • Comfort with using microscopes for characterization.

    • Basic skills in data analysis (Excel, Python, or MATLAB).

TIME COMMITMENT (HRS/WK)

3-5h/week would be a good start

SKILLS/TECHNIQUES GAINED

nanofabricaiton and plasma physics

MENTORING PLAN

Have weekly meetings. help student understanding the basic and foreseeing the research long term goal. provide constant feedback on the research project

Preferred Student Status

Sophomore
Junior
Senior
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